2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics. 2N Central Semiconductor Bipolar Transistors – BJT NPN Silicon Power Transistor datasheet, inventory, & pricing. 2N from Texas Instruments High-Performance Analog. Find the PDF Datasheet, Specifications and Distributor Information.
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2N3054 Datasheet PDF
The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms dxtasheet 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.
Retrieved 31 October The device is designed to operate dagasheet an efficient heatsink, but care must be taken to mount the device properly,    else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat. Also the higher frequency response has improved performance when used in audio amplifiers. It has a transition frequency of 2.
The art of electronics 2nd ed. It often has a transition frequency of around 3. KD are packaged in a TO-3 case style called T41 by Teslait is a 20 amp80 voltwatt power transistor. The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps.
Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings. Graf; William Sheets With an “infinite” heatsink, that is: The frequency at which gain begins to drop off may be much lower, see below.
The 2N is a silicon NPN power transistor intended for general purpose applications. Retrieved 7 November Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers. The robot builder’s bonanza 2nd ed.
Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion. In other projects Wikimedia Commons. Modern 2N datasheets often, but not always, specify f T of 2.
An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet.
The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists. The exact performance characteristics depend on the manufacturer and date; before 2n33054 move to the epitaxial base datashee in the mids the f T could be as low as 0.
2n305 KD have higher power and higher current than 2N Retrieved from ” https: Build your own low-power transmitters: This page was last edited on 22 Novemberat In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N The 2N remains very popular as a series pass transistor datashwet linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters although its use in audio power amplifiers and Dagasheet inverters is now less common and its use in higher frequency switch-mode applications never was very practical.
Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range.
2N datasheet & applicatoin notes – Datasheet Archive
With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology.
Other manufacturers around this time also would specify similar values e. KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications.
RCA by had changed their specification to give 2. Commons category ddatasheet from Wikidata. Variants with higher voltage ratings e. The team of design, production, and applications engineers received RCA Electronic Components achievement awards in The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard.
The total power dissipation written P D in most American datasheets, P tot in European ones depends 23n054 the heatsink to which the 2N is connected.
It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids.